Samsung intends to use MRAM memory in wearable gadgets and cars

Samsung intends to use MRAM memory in wearable gadgets and cars
Samsung plans to significantly expand the scope of MRAM memory. This, according to network sources, was stated by representatives of the Samsung Foundry division at the Semicon Korea event.

MRAM, or Magnetoresistive Random Access Memory, is a magnetoresistive random access memory. Information in MRAM is stored using magnetic moments, not electric charges.

MRAM products are non-volatile, meaning they can store data without power supply. The magnetoresistive effect that underlies the technology assumes high scalability and provides excellent technical characteristics.

In the spring of 2019, Samsung organized mass production of embedded magnetoresistive eMRAM memory based on the 28-nm FD-SOI (fully depleted silicon on an insulator) process. Compared to embedded flash chips, eMRAM solutions offer higher energy efficiency and approximately 1,000 times faster write speeds (eMRAM does not require an erase cycle before writing data).

Earlier it was said that eMRAM memory is focused on the areas of the Internet of Things and artificial intelligence. Now Samsung is announcing its intention to use MRAM memory in many other areas. Among them are named wearable devices, automotive electronics, graphics memory, low-level cache, etc.
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