Samsung is ready to start production of advanced 256-layer 3D NAND flash memory

Samsung is ready to start production of advanced 256-layer 3D NAND flash memory
At a meeting with investors on Monday, Samsung senior Vice President Han Jin-man said that the company is technically capable of producing 256-layer 3D NAND memory. The company has already launched the production of 128-layer single-chip memory chips. To produce 256-layer chips, you need to connect two 128-layer crystals into a single chip. Fast and efficient.

According to Samsung, the company has the most advanced technologies for the production of multi-layer 3D NAND memory. Dual-stack 3D NAND assemblies — as the company calls two multi — layer memory crystals docked together-are the most advanced. At the same time, Samsung urges not to focus on the maximum number of 3D NAND layers. According to the company, there is an optimum for each application.

"The actual number of layers in a chip may vary depending on customer needs and market conditions," Han said. — It's not about how many layers you can put together, it's about how many layers are the most optimal for the market at the moment."

But don't take this statement as Samsung's desire to manipulate supply and demand. Everything is more prosaic. When joining two crystals, there will always be defects at the junction boundaries, not to mention the difficulty of etching a silicon wafer to a depth of 128 layers without defects. Therefore, neither the company nor anyone else yet knows how many layers Samsung will reach in the mass production of two-stack" 256-layer " 3D NAND chips. Simple arithmetic does not work in this case and serves as a simple guideline. By the way, the company had and probably still has problems with a high level of defects in the production of 160-layer 3D NAND.
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