SK Hynix successfully created "4D NAND" flash memory
In August of this year, SK Hynix announced the release of a supposedly new type of flash memory called "4D NAND". Now it is reported that the manufacturer has successfully created this type of memory and is preparing to start its mass production.
It is reported that the company has created a 96-layer memory chips "4D NAND" capacity of 512 Gbit, that is 64 GB. In this case, the chip area was 30 % less than the 72-layer chip of the same capacity. There is also a 25% and 30% increase in read and write performance, respectively.
By the end of the year, SK Hynix plans to start mass production of 92-layer chips with a capacity of 512 GB. The next year the company is going to start production of such chips with the volume of 1 Tbit. It is also reported about plans to release client solid state drives up to 1 TB on the basis of SK Hynix controllers.
The "4D NAND" technology is essentially a slightly improved version of the long-used 3D NAND, rather than a fundamentally new approach to the creation of solid-state memory. The new SK Hynix memory will combine two important features. First, it will rely on a cell with a charge trap (Charge Trap Flash, CTF). Second, the peripheral circuits controlling the array of cells will be transferred under the cells themselves (Periphery Under Cell, PUC).
However, it is worth noting that SK Hynix has always released 3D NAND memory with a cell with a charge trap, like most other manufacturers. As for the transfer of the control periphery under the cells, a similar technology, but under the name (CMOS under the array, CuA), has long been used by Intel and Micron. And soon Samsung will start using CuA technology in the production of 3D NAND memory. So something really innovative in-memory "4D NAND" from SK Hynix is actually there.
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