The high level of defective 3D NAND MLC may cause a rise in memory prices

The high level of defective 3D NAND MLC may cause a rise in memory prices
3D NAND MLC

As reported by Taiwanese sources like DigiTimes, all leading manufacturers of flash memory faced problems in the transition to the release of multi-layer memory with a record of four bits per cell (QLC). Earlier this year, Samsung, Intel/Micron and Toshiba/WD announced the completion of the development of 3D NAND QLC memory and began experienced or even serial production of new products. Among them, 3D NAND QLC memory is not ready to be released only by SK Hynix.

Multi-layer memory with recording three bits in a cell mass produced for the second year in a row and the output level of usable 3D NAND TLC chips is high enough. In terms of bits, 3D NAND now holds over 60% of the production flow of all new NAND flash memory. However, further increase of the yield of effective chips 3D NAND TLC can also represent for manufacturers is difficult to solve the problem. As a result, the 3D NAND market in the first half of 2019 may be subject to a crisis of short supply, which will lead to an increase in prices for flash memory and products based on it.
Category: Technology | Views: 491 | Tags: 3D NAND MLC
Total comments: 0
avatar